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[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

Detection cases of stacking faults in SiC.

SiC has been actively researched and utilized in recent years for applications such as power devices. Due to the various polytypes of SiC, there is a problem where stacking defects, which can lead to disordered stacking arrangements, easily occur. One method for detecting these defects is photoluminescence (PL), which analyzes the light emitted when a sample is stimulated with light. We will introduce a case where mapping measurements were conducted to detect light emission caused by defects.

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Photoluminescence method

Photoluminescence method

PL：PhotoLuminescence

The photoluminescence method is a technique that involves irradiating a substance with light and observing the light emitted when excited electrons return to their ground state. Various information can be obtained from the resulting emission spectrum. - Samples with a bandgap of about 3.5 eV can be excited. - The mapping function allows for the acquisition of extensive information. - Measurements can be conducted down to approximately 10 K. - Generally, it is a non-destructive measurement that does not require special pretreatment.

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Precautions for Low-Temperature Photoluminescence Measurement

Precautions for Low-Temperature Photoluminescence Measurement

Photoluminescence method

- Photoluminescence measurement (PL measurement) can be conducted not only at room temperature but also by placing the sample in a cryostat for low-temperature measurements. Low-temperature measurements tend to show an increase in peak intensity and a decrease in peak full width at half maximum compared to room temperature measurements, which may provide insights into various energy levels. - Below, we will explain the precautions for low-temperature measurements and the differences in spectral shapes between room temperature and low-temperature measurements.

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[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment

[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment

It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.

In the fabrication of Si-based semiconductor devices, various processes such as ion implantation and annealing are performed. It is considered important to confirm the degree of irradiation defects and the extent of crystallinity recovery before and after these processes in order to control the manufacturing process. Photoluminescence (PL) measurements at low temperatures are one effective means of investigating these aspects. An example of PL measurements of samples that underwent ion implantation on a Si substrate followed by annealing treatment is presented.

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